- Heterojunction Bipolar Transistors
- Military: HBT
Универсальный русско-английский словарь. Академик.ру. 2011.
Heterojunction Bipolar Transistors
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Heterojunction bipolar transistor — The heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) which uses differing semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it that can… … Wikipedia
Heterojunction bipolar transistor — Der Heterojunction Bipolar Transistor (HBT bzw. HJBT, dt. »Bipolartransistor mit Heteroübergang«) ist ein Bipolartransistor (BJT), dessen Emittermaterial anders als das der Basis gewählt ist. Dabei entsteht die namensgebende Heterostruktur.… … Deutsch Wikipedia
Bipolar junction transistor — BJT redirects here. For the Japanese language proficiency test, see Business Japanese Proficiency Test. PNP … Wikipedia
Heterojunction — A heterojunction is the interface that occurs between two layers or regions of dissimilar crystalline semiconductors. These semiconducting materials have unequal band gaps as opposed to a homojunction. It is often advantageous to engineer the… … Wikipedia
Heterojunction Bipolartransistor — Der Heterojunction Bipolartransistor (HBT bzw. HJBT) ist ein Bipolartransistor (BJT), dessen Emittermaterial anders als das der Basis gewählt ist. Dabei entsteht die namensgebende Heterostruktur. Er entspricht damit der bipolaren Ausführung eines … Deutsch Wikipedia
HBT — Heterojunction Bipolar Transistor (Academic & Science » Electronics) Heterojunction Bipolar Transistors (Governmental » Military) * Hanbury Brown Twiss (Academic & Science » Physics) * Herringbone Twill (Governmental » Military) * Houston Belt… … Abbreviations dictionary
Silicon-germanium — SiGe (IPA|ˈsɪɡɪː, IPA|ˈsaɪdʒɪ), or silicon germanium, is a general term for the alloy Si1 xGex which consists of any molar ratio of silicon and germanium. It is commonly used as a semiconductor material in integrated circuits (ICs) for… … Wikipedia
Band gap — This article is about solid state physics. For voltage control circuitry in electronics, see Bandgap voltage reference. In solid state physics, a band gap, also called an energy gap or bandgap, is an energy range in a solid where no electron… … Wikipedia
Chemical beam epitaxy — (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III V semiconductor systems. This form of epitaxial growth is performed in an ultrahigh vacuum system. The reactants are in the form of molecular… … Wikipedia
Herbert Kroemer — (Herbert Krömer) (* 25. August 1928 in Weimar) ist ein deutscher Physiker und Nobelpreisträger. Inhaltsverzeichnis 1 Leben 2 Werk 3 Auszeichnungen 4 W … Deutsch Wikipedia
semiconductor device — ▪ electronics Introduction electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… … Universalium
